s m d s c h o t t k y b a r r i e r r e c t i f i e r s reverse v oltage: 20 to 100 v olts forward current: 1.0 amp rohs device page 1 rev :a cdbb120-hf thru. cdbb1 100-hf qw -jb018 comchip t echnology co., l td. features -ultra high-speed switching. mechanical data -low profile surface mount applications in order to optimize board space. -low power loss, high ef ficiency . -hight current capability , low forward voltage drop. -hight surge capability . -guardring for overvoltage protection. -silicon epitaxial planar chip,metal silicon junction. forward surge current reverse current storage temperature a a ma parameter conditions on rate load (jedec method) 8.3ms single half sine-wave superimposed forward rectified current see fig.1 thermal resistance diode junction capacitance v r =v rrm t a =25c v r =v rrm t a =100c f=1mh z and applied 4v dc reverse v oltage junction to ambient symbol i o i fsm i r r ja c j t stg i r min. typ . max. ma c/w pf c 1.0 30 0.5 20 88 120 -50 +175 units d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) d o - 2 1 4 a a ( s m b ) 0 . 0 9 8 ( 2 . 5 0 ) 0 . 0 8 3 ( 2 . 1 0 ) 0 . 0 8 7 ( 2 . 2 0 ) 0 . 0 7 5 ( 1 . 9 0 ) 0 . 1 5 7 ( 4 . 0 0 ) 0 . 1 3 0 ( 3 . 3 0 ) 0 . 1 8 9 ( 4 . 8 0 ) 0 . 1 5 7 ( 4 . 0 0 ) 0 . 0 1 2 ( 0 . 3 1 ) m a x . 0 . 2 2 0 ( 5 . 6 0 ) 0 . 1 9 7 ( 5 . 0 0 ) 0 . 0 6 3 ( 1 . 6 0 ) 0 . 0 2 8 ( 0 . 7 0 ) 0 . 0 0 8 ( 0 . 2 1 ) m a x . -case: molded plastic, do-214aa / smb -t erminals: solderable per mil-std-750, method 2026. -polarity: indicated by cathode band. -weight: 0.091 grams -epoxy: ul94-v0 rate flame retardant. maximum ratings and electrical characteristics ratings at t a=25c unless otherwise noted. single phase, half wave, 60hz, resistive or inductive loaded. for capacitive load, derate current by 20% . halogen free cdbb 120-hf max. repetitive peak reverse voltage max. dc blocking voltage max. rms voltage cdbb 140-hf cdbb 160-hf cdbb 1 100-hf units symbol parameter v rrm v dc v rms 20 20 14 40 40 28 60 60 42 100 100 70 v v v max. instantaneous forward voltage @ 1.0a, t a =25c v f 0.45 0.50 0.70 0.81 v operating t emperature t j -50 to +150 c
comchip t echnology co., l td. page 2 rev :a s m d s c h o t t k y b a r r i e r r e c t i f i e r s ra ting and characteristic cur ves (cdbb120-hf thru. cdbb1 100-hf) percent of rated peak reverse v oltage, (%) 200 120 80 160 0 fig.5- t ypical reverse characteristics 0.01 0.1 1 10 100 forward v oltage, (v) 0.1 0.01 0.1 1.0 10 100 0.9 reverse v oltage, (v) ambient t emperature, (c) 0 0.6 0.8 1.1 1.5 0 100 175 0.2 1.2 40 0.5 1.3 0.4 t j =125c t j =25c number of cycles at 60hz 25 50 75 150 125 1.0 a v e r a g e f o r w a r d c u r r e n t , ( a ) p u ls e w id th 3 0 0 u s 1 % d u ty c y c le t j = 2 5 c 0.7 0.3 r e v e r s e l e a k a g e c u r r e n t , ( m a ) j u n c t i o n c a p a c i t a n c e , ( p f ) 0 18 30 1 10 100 6 24 12 o t j =25 c 8.3ms single half sine wave, jedec method 0.01 0 100 350 1 10 100 0.1 50 200 150 300 250 fig.1 - t ypical forward current derating curve fig.2 - t ypical forward characteristics i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) fig.3 - maximum non-repetitive forward surge current fig.4 - t ypical junction capacitance p e a k f o r w a r d s u r g e c u r r e n t , ( a ) qw -jb018 c d b b 1 2 0 - h f ~ c d b b 1 4 0 - h f c d b b 1 1 0 0 - h f c d b b 1 6 0 - h f
comchip t echnology co., l td. page 3 rev :a s m d s c h o t t k y b a r r i e r r e c t i f i e r s b c d d d 2 d 1 s y m b o l a ( m m ) ( i n c h ) 1 . 9 6 9 m i n . 8 . 0 0 0 . 1 0 1 . 5 0 0 . 1 0 5 0 . 0 m i n . 1 3 . 5 0 0 . 5 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 1 2 . 0 0 . 3 0 1 8 . 4 1 . 0 0 3 3 0 2 . 0 0 0 . 0 5 9 0 . 0 0 4 1 2 . 9 9 0 . 0 7 9 0 . 5 3 1 0 . 0 2 0 s y m b o l ( m m ) ( i n c h ) 0 . 3 1 5 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 7 2 4 0 . 0 4 0 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 5 . 5 0 0 . 1 0 0 . 2 1 7 0 . 0 0 4 4 . 0 0 0 . 1 0 0 . 1 5 7 0 . 0 0 4 5 . 9 0 0 . 1 0 0 . 2 3 2 0 . 0 0 4 3 . 0 0 0 . 1 0 0 . 1 1 8 0 . 0 0 4 0 . 6 0 0 . 1 0 0 . 2 3 6 0 . 0 0 4 t 0 . 4 7 2 0 . 0 1 2 ( s m b ) d o - 2 1 4 a a ( s m b ) d o - 2 1 4 a a reel t aping specification o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start t c direction of feed i n d e x h o l e d e f b w p p 0 p 1 a d 1 d 2 d w 1 qw -jb018
comchip t echnology co., l td. page 4 rev :a s m d s c h o t t k y b a r r i e r r e c t i f i e r s qw -jb018 suggested p ad layout size (inch) 0.169 (mm) 4.30 2.50 2.30 0.098 0.091 6.80 0.268 e 1.80 0.071 a b c d d o - 2 1 4 a a ( s m b ) a b c e d standard packaging c a s e t y p e 3 , 0 0 0 r e e l ( p c s ) reel size (inch) 1 3 r e e l p a c k d o - 2 1 4 a a ( s m b ) part number cdbb120-hf marking code marking code cdbb140-hf CDBB160-HF cdbb1 100-hf 120 140 160 1 100 c xxx comchip logo pkg sma smb smc a b c product type marking code package : oo x x schottky diode special code blank l ll oo sl others low vf ultra low vf super low vf b cathod band xxx/xxxx = product type marking code
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